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Iranian Journal of Electrical and Electronic Engineering، جلد ۱۵، شماره ۴، صفحات ۴۷۷-۴۸۴
عنوان فارسی
چکیده فارسی مقاله
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عنوان انگلیسی Design and Analysis of New Level Shifter With Gate Driver for Li-Ion Battery Charger in 180nm CMOS Technology
چکیده انگلیسی مقاله In this work, the design and analysis of new Level Shifter with Gate Driver for Li-Ion battery charger is proposed for high speed and low area in 180nm CMOS technology. The new proposed level shifter is used to raise the voltage level and significantly reduces transfer delay 1.3ns (transfer delay of conventional level shifter) to 0.15ns with the same input signal. Also, the level shifter with gate driver achieves a propagation delay of less than 0.25ns and the total area is only 0.05mm2. The proposed level shifter with gate driver was designed, simulated and layouted in Cadence using TSMC 180nm CMOS technology.
کلیدواژه‌های انگلیسی مقاله
نویسندگان مقاله | M. El Alaoui
Electronics, Signals, Systems and Computer Science Laboratory (LESSI), Department of Physics, Faculty of Sciences Dhar el Mehraz, Sidi Mohamed Ben Abdellah University, Fez, Morocco.


| F. Farah
Electronics, Signals, Systems and Computer Science Laboratory (LESSI), Department of Physics, Faculty of Sciences Dhar el Mehraz, Sidi Mohamed Ben Abdellah University, Fez, Morocco.


| K. El Khadiri
Electronics, Signals, Systems and Computer Science Laboratory (LESSI), Department of Physics, Faculty of Sciences Dhar el Mehraz, Sidi Mohamed Ben Abdellah University, Fez, Morocco.


| H. Qjidaa
Electronics, Signals, Systems and Computer Science Laboratory (LESSI), Department of Physics, Faculty of Sciences Dhar el Mehraz, Sidi Mohamed Ben Abdellah University, Fez, Morocco.


| A. Aarab
Electronics, Signals, Systems and Computer Science Laboratory (LESSI), Department of Physics, Faculty of Sciences Dhar el Mehraz, Sidi Mohamed Ben Abdellah University, Fez, Morocco.


| A. Lakhssassi
Department of Computer Science and Engineering, University of Quebec in Outaouais, (UQO) B-2014, Pavillon Lucien-Brault, Canada.


| A. Tahiri
Laboratory of Computer Science and Interdisciplinary Physics, Sidi Mohamed Ben Abdellah University, ENS- Fez, Morocco.
نشانی اینترنتی http://ijeee.iust.ac.ir/browse.php?a_code=A-10-2958-1&slc_lang=en&sid=1
فایل مقاله اشکال در دسترسی به فایل - ./files/site1/rds_journals/446/article-446-2047150.pdf
کد مقاله (doi)
زبان مقاله منتشر شده en
موضوعات مقاله منتشر شده 2-Microelectronics
نوع مقاله منتشر شده Research Paper
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