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International Journal of Nanoscience and Nanotechnology (IJNN)، جلد ۱۵، شماره ۳، صفحات ۲۱۱-۲۱۷
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عنوان انگلیسی A Novel Design of Quaternary Inverter ‎Gate Based on GNRFET
چکیده انگلیسی مقاله This paper presents a novel design of quaternary logic gates using graphene nanoribbon field effect transistors (GNRFETs). GNRFETs are the alternative devices for digital circuit design due to their superior carrier-transport properties and potential for large-scale processing. In addition, Multiple-valued logic (MVL) is a promising alternative to the conventional binary logic design. Saving power and reduced chip area is the reason for simplicity. The first design is a resistive-load GNRFET-based quaternary inverter gate. The channel length is 15 nm. This circuit works with a 0.9V supply voltage at room temperature. For optimizing the first design, resistors are replaced with transistors in the second design. Simulation results using HSPICE indicate that in the second proposed design provides 61.1% reduction in power-delay product (PDP) that of first proposed. These results can be used in MVL design based on nano devices.
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نویسندگان مقاله M. Nayeri |
Department of Computer Engineering, Kerman Branch, Islamic Azad University, Kerman, ‎Iran.‎

P. Keshavarzian |
Department of Computer Engineering, Kerman Branch, Islamic Azad University, Kerman, ‎Iran.‎

M. Nayeri |
Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran.‎

نشانی اینترنتی http://www.ijnnonline.net/article_36253_5469f735c62b94520f48dbc0399b6b34.pdf
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