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International Journal of Engineering، جلد ۳۶، شماره ۷، صفحات ۱۲۶۹-۱۲۷۷
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عنوان انگلیسی Performance Analysis and Optimization of Asymmetric Front and Back Pi Gates with Dual Material in Gallium Nitride High Electron Mobility Transistor for Nano Electronics Application
چکیده انگلیسی مقاله The impact of aluminium nitride (AlN) Spacer, Gallium Nitride (GaN) Cap Layer, Front Pi Gate (FG) and Back Pi Gate(BG), Dual Floating material  High K dielectric material such as Hafnium dioxide (HfO2), Aluminium Oxide (Al2O3), Silicon nitride  (Si3N4) on Aluminium  Galium Nitride/ Gallium Nitride (AlGaN/GaN), Heterojunction High Electron Mobility Transistor (HEMT) of 6nm technology is simulated and extracted the results using the Silvaco Atlas Technology Computer-Aided Design (TCAD) tool.The importance of High K dielectric materials like Al2O3 and Si3N4 were studied for the proposal of GaN HEMT. AlN, GaN Cap Layers, and High K Dielectric material are layered one on another to overcome the conventional transistor draw backs  like surface defects, scattering of the electron, and less mobility of electron. Hot electron effect is overcome by Pi type gate.Triple tooth floating material is placed in the buffer layer to improve breakdown voltage. Therefore, by optimizing the HEMT structure the inabilities for certain devices are converted to abilities. The dependency on DC characteristics and RF characteristics due to GaN Cap Layers, Multi gate (FG &BG), and High K Dielectric material, Dual triple tooth material in buffer layer  with recessd gate  is established. Further Compared Single Gate (SG)  Passivated HEMT, Double Gate (DG) Passivated HEMT, Double Gate Triple (DGT) Tooth Passivated HEMT, High K Dielectric Front Pi Gate (FG) and Back Pi Gate  (BG), Asymmetric High K Dielectric Front Pi Gate (FG) and Back Pi Gate (BG) with recessed gate Nanowire HEMT. It was observed that the proposed resulted with increased Drain Current (Ion) of 7.5 (A/mm), low Leakage current (Ioff) 3E-15 (A), Transconductance (Gm) of 4.8 (S/mm), Drain Conductance (Gd) of 2.5 (S/mm), Maximum Oscillation frequency (Fmax) 745 GHz, Minimum Threshold Voltage (Vth) of -4.5V, On Resistance (Ron) of 0.12(Ohms) at Vgs =0V.
کلیدواژه‌های انگلیسی مقاله Dual Floating Material,Drain current,Leakage Current,Ron,Technology Computer Aided Design
نویسندگان مقاله Y. Gowthami |
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Guntur, Andhra Pradesh, India

B. Balaji |
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Guntur, Andhra Pradesh, India

K. Srinivasa Rao |
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Guntur, Andhra Pradesh, India

نشانی اینترنتی https://www.ije.ir/article_169038_92980550da7f4512b2275898bc21aa89.pdf
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