این سایت در حال حاضر پشتیبانی نمی شود و امکان دارد داده های نشریات بروز نباشند
International Journal of Engineering، جلد ۳۶، شماره ۱، صفحات ۱۰۸-۱۱۸

عنوان فارسی
چکیده فارسی مقاله
کلیدواژه‌های فارسی مقاله

عنوان انگلیسی Ultra Low Power Temperature Compensated Complementary Metal Oxide Semiconductor Ring Oscillator in Subthreshold
چکیده انگلیسی مقاله Low power consumption, low chip area and fabrication in the standard complementary metal oxide semiconductor (CMOS) process are vital requirements for oscillators used in low-cost bio-implantable and wearable devices. Conventional ring oscillators (ROs) are good candidates for using in biomedical applications. However, their oscillation frequency strongly depends on the temperature. In this study, a temperature compensated ring oscillator with low power consumption is proposed. The transistors of the proposed ring oscillator operate in the subthreshold region to achieve a low power and low voltage performance. Since, in the subthreshold region, the oscillation frequency of a conventional ring oscillator increases with increase in the temperature, two current sources are used to power the proposed subthreshold ring oscillator: a temperature independent current source and a complementary to absolute temperature (CTAT) current source. In the proposed circuit, the CTAT current forms a small part of the total supplied current and its duty is to compensate for the oscillation frequency deviation. Two prototypes of the subthreshold ring oscillator were designed and simulated for a target frequency of 1MHz using commercially available 0.18µm RF-CMOS technology. The thermal coefficient (TC) of the uncompensated ring oscillator was 2400 ppm/ºC from -40ºC to 85ºC, though applying the proposed technique reduces the TC of the ring oscillator to 80.4 ppm/ºC with total power consumption as low as 14.5µW.
کلیدواژه‌های انگلیسی مقاله Complementary to Absolute Temperature,Current Reference Ring Oscillator,Subthreshold,Thermal Compensation

نویسندگان مقاله E. Sadeghi |
IC Design Research Laboratory, Electrical & Robotic Engineering Department, Shahrood University of Technology, Shahrood, Iran

E. Ebrahimi |
IC Design Research Laboratory, Electrical & Robotic Engineering Department, Shahrood University of Technology, Shahrood, Iran


نشانی اینترنتی https://www.ije.ir/article_159695_64dbae8d626be893cf31b14e935c363f.pdf
فایل مقاله فایلی برای مقاله ذخیره نشده است
کد مقاله (doi)
زبان مقاله منتشر شده en
موضوعات مقاله منتشر شده
نوع مقاله منتشر شده
برگشت به: صفحه اول پایگاه   |   نسخه مرتبط   |   نشریه مرتبط   |   فهرست نشریات