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International Journal of Engineering، جلد ۳۷، شماره ۶، صفحات ۱۰۵۹-۱۰۶۶
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عنوان انگلیسی Improved Performance Analysis and Design of Dual Metal Gate FinFET for Low Power Digital Applications
چکیده انگلیسی مقاله A High-K Dielectric Dual Metal Gate FinFET (DMG-FinFET) is proposed in this work to improve the drain current and electrical characteristics of the device. The proposed device employing dielectric materials such as Silicon dioxide, Hafnium oxide and Titanium oxide and investigated in 10 nm technology. The architecture represents a critical advancement in transistor design, addressing challenges posed by traditional high-K gate dielectric materials being HfO2 and TiO2. This work employs a comprehensive approach, incorporating simulation techniques to evaluate the performance metrics of DMG FinFET. This investigation encompasses key aspects being transistor characteristics, power consumption, and reliability. This high-k dielectric (HfO2) Dual material Gate –FinFET device achieving improved performance parameters such as Ion= 32.12 mA, Ioff= 33 μA, Gm(max) = 0.045 S, Gds(max) = 0.024 S and Ron(max) = 32.87 kΩ. Therefore this work is suitable for designing high performance devices with high-k dielectric materials being HfO2 and TiO2.  The impact of dual metal gate materials on Ion, Ioff, Gm (max), Gds(max) and Ron(max) is calculated and improved 64% compared to conventional device.
کلیدواژه‌های انگلیسی مقاله Dielectric Material, On current, Off current, Silicon dioxide, Nano Technology
نویسندگان مقاله P. Padmaja |
Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, India

D. Vemana Chary |
Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, India

R. Erigela |
Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, India

G. Sirisha |
Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, India-500097

S. K. ChayaDevi |
Department of information Technology, Vasavi College of Engineering, Hyderabad, India

M. C. Pedapudi |
Department of Electronics and Communications Engineering, Vignan's Foundation for Science Technology & Research (Deemed to be University), Vadlamudi, Guntur District, A.P, India

B. Balaji |
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

S. Cheerala |
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

V. Agarwal |
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

Y. Gowthami |
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

نشانی اینترنتی https://www.ije.ir/article_189983_be4dfb4dbba38bec1e36eec32e63602a.pdf
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