این سایت در حال حاضر پشتیبانی نمی شود و امکان دارد داده های نشریات بروز نباشند
International Journal of Engineering، جلد ۳۸، شماره ۱۲، صفحات ۲۹۰۲-۲۹۰۹
عنوان فارسی
چکیده فارسی مقاله
کلیدواژه‌های فارسی مقاله
عنوان انگلیسی Design and Analysis of Dielectric Spacer Dual Oxide Gate L Shaped Tunnel Field Effect Transistor with Extended Source and Drain
چکیده انگلیسی مقاله This paper presents the Spacer engineering Dual Oxide Gate L shaped Tunnel Field Effect Transistor (SDOG LTFET) incorporating Buried Oxide (BOX) in 10nm technology. The proposed device employs an extended source and drain to minimize the leakage current, and the metal gate is connected under a recessed area to improve the on-state current. The work focuses on analyzing the performance characteristics of the proposed SDOG LTFET, prioritizing the stability and functionality using the Silvaco TCAD tool. The unique L-shaped architecture provides notable improvements in stability and effectively mitigates short-channel effects (SCE), and sub-threshold swing at a work function of 1.4eV. The proposed device demonstrates significant advancements in ON-state and OFF-state currents compared to conventional TFET design. A detailed comparative analysis underscores the advantages of the proposed device over the dual material gate TFET and conventional TFET. This work obtained the increased drain current of 3.18 ×10-6A, smaller sub-threshold slope (SS) of 67 mV/dec, Ion/Ioff ratio of 6 ×109, and smallest DIBL 61.48 mV/V.  Therefore, with increased control gate length, there is also an increase in Ion state current and a decrease in Ioff state current for the proposed SDOG LTFET potential for low-power applications.  
کلیدواژه‌های انگلیسی مقاله Hafnium Oxide,Sub threshold swing,Drain induced barrier lowering,threshold voltage,Drain current
نویسندگان مقاله D. Venkatarami Reddy |
Department of Electronics and Communication Engineering, Kodada Institute of Technology and Science for Women, Kodad, TS, India

R. Erigela |
Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, India

G. Sirisha |
Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, India

G. Chenna Kesava Reddy |
Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering College, Meerpet, Hyderabad, India

B. Nageshwar Rao |
Department of Cyber Security & IoT, School of Engineering, Malla Reddy University, Maisammaguda, Dulapally, Hyderabad, Telangana, India

L. Singh |
Department of Electronics and Communication Engineering, Graphic Era (Deemed to be University), Dehradun, India

B. Balaji |
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

S. V. Cheerla |
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

V. Agarwal |
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

نشانی اینترنتی https://www.ije.ir/article_215680_e03b8701b980b0c415f93b474759390b.pdf
فایل مقاله فایلی برای مقاله ذخیره نشده است
کد مقاله (doi)
زبان مقاله منتشر شده en
موضوعات مقاله منتشر شده
نوع مقاله منتشر شده
برگشت به: صفحه اول پایگاه   |   نسخه مرتبط   |   نشریه مرتبط   |   فهرست نشریات