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Journal of Nanostructures، جلد ۷، شماره ۳، صفحات ۱۹۴-۱۹۹
عنوان فارسی
چکیده فارسی مقاله
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عنوان انگلیسی Preparation and Characterization of ZnO Thin Layers with Various Percentages of Gallium Impurities
چکیده انگلیسی مقاله In this study, thin films of pure ZnO and  doped ZnO with different percentages of gallium (0.5, 1, 2 and 4vt. %) on the glass substrates were deposited by using sol-gel method via spin coating technique at 2500 rpm, and all layers were annealed at 200°C for 1h and then Were examined their electrical, optical and structural properties. Concentration of all solution was 0.1M. The results show that the optimized layer is 0.5% GZO. By examining the transmittance spectrums we find that by doping the transparency of samples were improved and all samples in the visible areas 400-800nm are transparent. The electrical conductivity of all samples has been measured by four-point probe technique. The electrical conductivitys of pure ZnO sample and 0.5% GZO are 910-5 S/cm and 110-4 S/cm respectively. It can be a good choice for optoelectronic applications. Also X-ray diffraction results showed that diffraction peaks of 0.5% GZO sample have a small changes towards lower angles compared to the diffraction peaks of ZnO. 
کلیدواژه‌های انگلیسی مقاله GZO layer, Sol-Gel, Spin coating, Thin film
نویسندگان مقاله محمد حسین منظری توکلی | mohammad hossein manzari tavakoli
department of physics, faculty of science, vali-e-asr university of rafsanjan, rafsanjan, iran

مهدی احمدی |
department of physics, faculty of science, vali-e-asr university of rafsanjan, rafsanjan, iran

محمد ثابت |
department of chemistry, faculty of science, vali-e-asr university of rafsanjan, rafsanjan, iran

نشانی اینترنتی http://jns.kashanu.ac.ir/article_34332_a032bf727bb572d89ccfaf1e642733ac.pdf
فایل مقاله اشکال در دسترسی به فایل - ./files/site1/rds_journals/497/article-497-485392.pdf
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زبان مقاله منتشر شده en
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