این سایت در حال حاضر پشتیبانی نمی شود و امکان دارد داده های نشریات بروز نباشند
International Journal of Nanoscience and Nanotechnology (IJNN)، جلد ۱۸، شماره ۳، صفحات ۱۹۷-۲۰۸

عنوان فارسی
چکیده فارسی مقاله
کلیدواژه‌های فارسی مقاله

عنوان انگلیسی Low Power Soft-Error Hardened Latch Implemented by Carbon Nanotube Field-Effect Transistors
چکیده انگلیسی مقاله    A soft error hardened latch is designed, which is based on carbon nanotube field-effect transistors (CNTFETs). The nanoscale circuits are more susceptible to transient or soft errors due to reduced stored charge in their sensitive nodes. Hence, an energy efficient design is a significant challenge, particularly for storage elements like latches. The proposed hardened latch consists of a Schmitt trigger circuit to mask the transient errors, a memory cell, and a C-element with an inverter at its output. The delay element followed by a C-element and a memory cell structure filters single event transient (SET) effectively and has improved robustness against single event upset (SEU). CNTFETs are substituted to gain all the benefits of nanotubes, such as robustness, temperature stability, high speed, and low power consumption. The implementation results in 32nm technology indicate a power consumption of 11.33nW for the supply voltage of 0.9V. The designed latch has low power consumption and lower power-delay product (PDP) concerning the design in CMOS technology. Compared to reported CNTFET latches, the simulation results indicate that, in addition to lower area requirement the proposed latch is more resistant to energetic particles strike than other similar latches and the rise and fall time of the proposed structure is between 12 to 15 ps in different conditions.
کلیدواژه‌های انگلیسی مقاله hardened latch,carbon nanotube FET,Schmitt trigger,C-element,soft error,memory cell

نویسندگان مقاله M. Soltani Mohammadi |
Department of Electrical Engineering, South Tehran Branch, Islamic Azad University, Tehran, Iran

S. Sadughi |
Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran

F. Razaghian |
Department of Electrical Engineering, South Tehran Branch, Islamic Azad University, Tehran, Iran


نشانی اینترنتی https://www.ijnnonline.net/article_254344_6f1759c2872bfa34c0a5d3650b4605b2.pdf
فایل مقاله فایلی برای مقاله ذخیره نشده است
کد مقاله (doi)
زبان مقاله منتشر شده en
موضوعات مقاله منتشر شده
نوع مقاله منتشر شده
برگشت به: صفحه اول پایگاه   |   نسخه مرتبط   |   نشریه مرتبط   |   فهرست نشریات